Japan Ferroelectric RAM Market Identify the Companies Best-Positioned

Ferroelectric RAM Market Overview 2021 - 2025

This has brought along several changes in This report also covers the impact of COVID-19 on the global market.

The rising technology in Ferroelectric RAM Market is also depicted in this research report. Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary 0s and 1s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a 1 is encoded using the negative remnant polarization -Pr, and a 0 is encoded using the positive remnant polarization .In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the up or down orientation (depending on the polarity of the charge), thereby storing a 1 or 0. Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say 0. If the cell already held a 0, nothing will happen in the output lines. If the cell held a 1, the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the down side. The presence of this pulse means the cell held a 1. Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs. Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtron's fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments' FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium).

Factors that are boosting the growth of the market, and giving a positive push to thrive in the global market is explained in detail.

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Key Competitors of the Global Ferroelectric RAM Market are: Cypress Semiconductor, Fujitsu, Texas Instruments, IBM, Infineon

Historical data available in the report elaborates on the development of the Ferroelectric RAM on national, regional and international levels. Ferroelectric RAM Market Research Report presents a detailed analysis based on the thorough research of the overall market, particularly on questions that border on the market size, growth scenario, potential opportunities, operation landscape, trend analysis, and competitive analysis.

Major Product Types covered are: Serial Memory
Parallel Memory
Others

Major Applications of Ferroelectric RAM covered are: Smart Meters
Automotive Electronics
Medical Devices
Wearable Devices

This study report on global Ferroelectric RAM market throws light on the crucial trends and dynamics impacting the development of the market, including the restraints, drivers, and opportunities.

The fundamental purpose of Ferroelectric RAM Market report is to provide a correct and strategic analysis of the Ferroelectric RAM industry. The report scrutinizes each segment and sub-segments presents before you a 360-degree view of the said market.

Market Scenario:

The report further highlights the development trends in the global Ferroelectric RAM market. Factors that are driving the market growth and fueling its segments are also analyzed in the report. The report also highlights on its applications, types, deployments, components, developments of this market.

Highlights following key factors:

:- Business description – A detailed description of the company’s operations and business divisions.
:- Corporate strategy – Analyst’s summarization of the company’s business strategy.
:- SWOT Analysis – A detailed analysis of the company’s strengths, weakness, opportunities and threats.
:- Company history – Progression of key events associated with the company.
:- Major products and services – A list of major products, services and brands of the company.
:- Key competitors – A list of key competitors to the company.
:- Important locations and subsidiaries – A list and contact details of key locations and subsidiaries of the company.
:- Detailed financial ratios for the past five years – The latest financial ratios derived from the annual financial statements published by the company with 5 years history.

Our report offers:

– Market share assessments for the regional and country level segments.
– Market share analysis of the top industry players.
– Strategic recommendations for the new entrants.
– Market forecasts for a minimum of 9 years of all the mentioned segments, sub segments and the regional markets.
– Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations).
– Strategic recommendations in key business segments based on the market estimations.
– Competitive landscaping mapping the key common trends.
– Company profiling with detailed strategies, financials, and recent developments.
– Supply chain trends mapping the latest technological advancements.

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